View NE6510179_129322.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DATA SHEET
N-CHANNEL GaAs HJ-FET
NE6510179A
1 W L-BAND POWER GaAs HJ-FET
DESCRIPTION
The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures.
FEATURES
: Pout = +31.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm Pout = +32.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm Pout = +35.0 dBm TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm * High linear gain : GL = 15 dB TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm GL = 10 dB TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = 0 dBm GL = 10 dB TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = 0 dBm * High power added efficiency : 70% TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm 58% TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm 56% TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm * GaAs HJ-FET structure * High output power
ORDERING INFORMATION
Part Number NE6510179A-T1 Package 79A Supplying Form * 12 mm wide embossed taping * Qty 1 kpcs/reel
Remark
To order evaluation samples, consult your NEC sales representative (Part number for sample order: NE6510179A).
Caution
Please handle this device at static-free workstation, because this is an electrostatic sensitive device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P13496EJ4V0DS00 (4th edition) Date Published August 2000 N CP(K) Printed in Japan
The mark
shows major revised points.
(c)
1998, 2000
NE6510179A
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Forward Current Gate Reverse Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGSO ID IGF IGR Ptot Tch Tstg Ratings 8 -4 2.8 25 25 15 150 -65 to +150 Unit V V A mA mA W C C
RECOMMENDED OPERATING CONDITIONS
Parameter Drain to Source Voltage Gain Compression Channel Temperature Symbol VDS Gcomp Tch Test Condition MIN. - - - TYP. 3.5 - - MAX. 5.5 5.0
Note
Unit V dB C
+110
Note Recommended maximum Gain Compression is 3.0 dB at VDS > 4.2 V
ELECTRICAL CHARACTERISTICS
(TA = +25C, unless otherwise specified, using NEC standard test fixture.)
Parameter Saturated Drain Current Pinch-off Voltage Gate to Drain Break Down Voltage Thermal Resistance Output Power Drain Current Power Added Efficiency Linear Gain
Note 1
Symbol IDSS Vp BVgd
Test Conditions VDS = 2.5 V, VGS = 0 V VDS = 2.5 V, ID = 14 mA Igd = 14 mA
MIN. - -2.0 12 - 31.5 - 50 -
TYP. 2.4 - -
MAX. - -0.4 -
Unit A V V
Rth Pout ID
Channel to Case f = 1.9 GHz, VDS = 3.5 V, Pin = +25 dBm, Rg = 100 , IDset = 200 mA (RF OFF) Note 2
5 32.5 0.72 58 10.0
8 - - - -
C/W dBm A % dB
add
GL
Notes 1. Pin = 0 dBm 2. DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples.
2
Data Sheet P13496EJ4V0DS00
NE6510179A
TYPICAL RF PERFORMANCE FOR REFERENCE
(TA = +25C, unless otherwise specified, using NEC standard test fixture.)
Parameter Output Power Drain Current Power Added Efficiency Linear Gain
Note
Symbol Pout ID
Test Conditions f = 900 MHz, VDS = 3.5 V, Pin = +20 dBm, Rg = 100 , IDset = 200 mA (RF OFF)
MIN. - - - -
TYP. 31.5 0.53 70 15.0
MAX. - - - -
Unit dBm A % dB
add
GL
Note Pin = 0 dBm
TYPICAL RF PERFORMANCE FOR REFERENCE
(TA = +25C, unless otherwise specified, using NEC standard test fixture.)
Parameter Output Power Drain Current Power Added Efficiency Linear Gain
Note
Symbol Pout ID
Test Conditions f = 1.9 GHz, VDS = 5.0 V, Pin = +25 dBm, Rg = 100 , IDset = 200 mA (RF OFF)
MIN. - - - -
TYP. 35.0 1.2 56 10.0
MAX. - - - -
Unit dBm A % dB
add
GL
Note Pin = 0 dBm
TYPICAL CHARACTERISTICS (TA = +25C)
OUTPUT POWER, DRAIN CURRENT AND GATE CURRENT vs. INPUT POWER
35 VDS = 3.5 V IDset = 200 mA (RF OFF) Rg = 100 f = 1.9 GHz 30 6 8 1 500
Output Power Pout (dBm)
25
4
20
ID
2
500
15
IG
0
10 0 5 10 15 Input Power Pin (dBm) 20 25 30
-2
0
Remark The graph indicates nominal characteristics.
Drain Current ID (mA)
Gate Current IG (mA)
Pout
1 000
Data Sheet P13496EJ4V0DS00
3
NE6510179A
S-PARAMETERS
Test Conditions: VDS = 3.5 V, IDset = 200 mA (RF OFF) Frequency MHz 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 MAG. 0.940 0.938 0.943 0.940 0.939 0.948 0.949 0.938 0.940 0.940 0.940 0.938 0.940 0.936 0.935 0.935 0.933 0.934 0.937 0.938 0.938 0.934 0.936 0.933 0.934 0.934 0.934 0.935 0.931 0.929 0.929 0.933 0.928 0.934 0.930 S11 ANG. (deg.) 179.9 178.6 177.5 176.9 175.8 175.1 174.9 174.1 173.2 172.4 171.9 171.7 171.1 170.4 170.1 169.4 169.9 168.0 167.5 167.0 166.4 167.1 165.1 164.6 163.7 162.9 162.1 161.7 160.7 160.4 158.8 158.1 156.6 156.5 155.5 MAG. 2.859 2.699 2.440 2.316 2.098 2.008 1.826 1.772 1.691 1.579 1.545 1.447 1.432 1.342 1.325 1.224 1.232 1.140 1.105 1.075 1.045 1.019 0.997 0.982 0.936 0.961 0.905 0.875 0.855 0.807 0.796 0.772 0.769 0.729 0.716 S21 ANG. (deg.) 92.3 92.6 91.9 91.5 91.2 90.3 92.0 90.5 92.5 90.2 92.7 91.4 91.0 90.6 91.3 89.2 90.2 90.0 88.5 90.0 90.3 91.1 89.7 91.0 89.6 87.4 90.9 85.8 89.3 87.2 89.3 85.5 92.6 87.0 92.2 MAG. 0.020 0.020 0.020 0.021 0.020 0.021 0.020 0.022 0.020 0.022 0.021 0.022 0.022 0.023 0.022 0.023 0.023 0.023 0.024 0.023 0.024 0.024 0.025 0.025 0.026 0.026 0.026 0.028 0.026 0.028 0.027 0.028 0.027 0.028 0.027 S12 ANG. (deg.) 21.9 24.3 25.3 26.7 28.0 29.6 31.2 32.0 36.4 34.6 39.3 37.3 40.5 40.4 42.5 42.3 47.0 45.5 46.1 49.5 49.6 52.3 53.3 54.8 54.6 57.7 55.6 58.5 58.2 59.5 58.0 63.2 60.2 65.2 65.6 MAG. 0.803 0.808 0.806 0.807 0.802 0.796 0.802 0.804 0.808 0.807 0.806 0.805 0.807 0.803 0.803 0.800 0.806 0.795 0.804 0.801 0.803 0.803 0.803 0.800 0.803 0.799 0.804 0.798 0.800 0.797 0.802 0.797 0.792 0.793 0.795 S22 ANG. (deg.) 177.2 177.2 176.5 176.3 175.3 175.5 173.7 174.5 173.7 173.5 172.8 172.3 171.9 171.4 171.3 170.8 171.4 169.9 169.5 168.8 168.7 169.5 167.6 166.7 166.6 165.3 165.4 164.1 164.1 163.2 162.6 161.1 160.5 159.9 159.9
4
Data Sheet P13496EJ4V0DS00
NE6510179A
APPLICATION CIRCUIT EXAMPLE
f = 1.9 GHz (Unit: mm)
VGS VDS
Rg Tantalum Condenser 47 F 1 000 p Tantalum Condenser 100 F
/4 OPEN STUB
16 4
/4 LINE
5 4 16 2 2 2 3 39.5
/4 OPEN STUB
5 2 C1 3 INPUT 12 3
50 LINE 6
3 3 5
C2 OUTPUT
42
GND f = 1.9 GHz VDS = 3.5 V IDset = 200 mA (RF OFF) C1 = 30 pF C2 = 30 pF Rg = 100 Substrate: Teflon glass ( r = 2.6) t = 0.8 mm
APPLICATION CIRCUIT EXAMPLE
f = 900 MHz (Unit: mm)
VGS VDS
Rg Tantalum Condenser 47 F 1 000 p Tantalum Condenser 100 F
/4 OPEN STUB
/4 LINE
/4 OPEN STUB
3 12 2 C1 6 C4 INPUT 2
2 1.5 11
5 2 5 1 C6 3 6 4 2 1.5 20 C7 6
50 LINE C2 OUTPUT 31 2.5 2 3 2.5
4 18 3 C5
R1 C3
f = 900 MHz VDS = 3.5 V IDset = 200 mA (RF OFF)
C1 = 30 pF C2 = 30 pF C3 = 30 pF C4 = 3 pF
C5 = 8 pF C6 = 8 pF C7 = 4 pF
R1 = 30 Rg = 100
GND Substrate: Teflon glass ( r = 2.6) t = 0.8 mm
Data Sheet P13496EJ4V0DS00
5
NE6510179A
79A PACKAGE DIMENSIONS (Unit: mm)
BOTTOM VIEW
4.2 MAX. Source Source 1.50.2
X
I
Gate
Drain
Gate
Drain
4.4 MAX.
5.7 MAX.
T
8
0.80.15
1.0 MAX.
0.40.15 5.7 MAX. 3.60.2
0.8 MAX.
79A PACKAGE RECOMMENDED P.C.B. LAYOUT (Unit: mm)
4.0 1.7 Stop up the hole with a rosin or something to avoid solder flow.
0.90.2
Drain
0.20.1
Gate
5.9
1.2
Source through hole 0.2 x 33 0.5 0.5
0.5
6.1
6
Data Sheet P13496EJ4V0DS00
1.0
1.2 MAX.
0.60.15
NE6510179A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your NEC sales representative.
Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235C or below, Time: 30 seconds or less (at 210C or higher), Count: 2 times or less, Note Exposure limit: None Pin temperature: 260C or below, Time: 5 seconds or less (per pin row), Note Exposure limit: None Recommended Condition Symbol IR35-00-2
For soldering
Partial Heating
-
Note After opening the dry pack, store it at 25C or less and 65% RH or less for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating).
Data Sheet P13496EJ4V0DS00
7
NE6510179A
CAUTION
The great care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal.
* The information in this document is current as of August, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

▲Up To Search▲

Price & Availability of NE6510179

	To Download NE6510179 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .